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Invited Speakers


Kah Wee Ang, National University of Singapore, Singapore.
"Boosting Black Phosphorus Transistor Performance through Interface Engineering"

Carlos A. Aragão de Carvalho, Univ. Fed. do Rio de Janeiro, Brazil.
"The relativistic electron gas: a candidate for nature’s left-handed material"

Timothy Boles, MACOM Technology Solutions, USA.
"GaN-on-Silicon-Present Capabilities and Future Directions"

Moritz Brehm, Johannes Kepler University Linz, Austria.
"Lasing in Ge dots on Si(001)"

Detlev Grutzmacher, Peter Grunberg Institute, Germany.
"Topological Insulators: heterostructures and p-n junctions"

Pawel Hawrylak, University of Ottawa, Canada.
"Electronic Structure, Magneto-excitons and Valley Polarized Electron Gas in 2D Semiconductors MoS2 and WS2"

Thomas Ihn, ETH Zurich, Switzerland.
"Spin-Orbit Coupling at the Level of a Single Electron"

Shane Johnson, Arizona State University, USA.
"Growth and Optical Properties of InAsSbBi/InAsSb Quantum Wells"

Lia Krusin Elbaum, The City College of New York, USA.
"Quantum Transport and 2DEG Quantum Well States at Topological Surfaces and Interfaces"

Guy Le Lay, Aix-Marseille University, France.
"Novel 2D Materials: Silicene, Germanene"

James A. Lott, Technische Universität Berlin, Germany.
"Low dimensional vertical-cavity surface-emitting lasers"

Thomas Myers, Texas State University, USA.
"New Doping Approaches For CdTe Use in Photovoltaic Devices"

Katsuhiro Tomioka, Hokkaido University, Japan.
"Selective-area growth of III-V nanowires on Si and transistor applications"

Carlos A. Trallero, Kansas State University, USA.
"Strong field processes inside solids at ultrafast time scales"

Important dates

Abstract submission openning: March 31, 2016
Deadline for abstract submission: June 30, 2016
Notification of abstract acceptance: July 07, 2016
Advanced registration deadline: July 17, 2016
Last day for special hotel rates: book now! Few rooms available at the low price
Start visa application by: End of June, 2016
Manuscript submission: October 7, 2016
Proceedings publication: 2017

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