Important dates

Abstract submission openning: March 31, 2016
Deadline for abstract submission: June 30, 2016
Notification of abstract acceptance: July 07, 2016
Advanced registration deadline: July 17, 2016
Last day for special hotel rates: book now! Few rooms available at the low price
Start visa application by: End of June, 2016
Manuscript submission: October 7, 2016
Proceedings: AIP Conf. Proc. Vol 1934

Conference Schedule

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Invited Speakers

Kah Wee Ang, National University of Singapore, Singapore.
"Boosting Black Phosphorus Transistor Performance through Interface Engineering"

Carlos A. Arag√£o de Carvalho, Univ. Fed. do Rio de Janeiro, Brazil.
"The relativistic electron gas: a candidate for nature’s left-handed material"

Timothy Boles, MACOM Technology Solutions, USA.
"GaN-on-Silicon-Present Capabilities and Future Directions"

Moritz Brehm, Johannes Kepler University Linz, Austria.
"Lasing in Ge dots on Si(001)"

Detlev Grutzmacher, Peter Grunberg Institute, Germany.
"Topological Insulators: heterostructures and p-n junctions"

Pawel Hawrylak, University of Ottawa, Canada.
"Electronic Structure, Magneto-excitons and Valley Polarized Electron Gas in 2D Semiconductors MoS2 and WS2"

Thomas Ihn, ETH Zurich, Switzerland.
"Spin-Orbit Coupling at the Level of a Single Electron"

Shane Johnson, Arizona State University, USA.
"Growth and Optical Properties of InAsSbBi/InAsSb Quantum Wells"

Lia Krusin Elbaum, The City College of New York, USA.
"Quantum Transport and 2DEG Quantum Well States at Topological Surfaces and Interfaces"

Guy Le Lay, Aix-Marseille University, France.
"Novel 2D Materials: Silicene, Germanene"

James A. Lott, Technische Universität Berlin, Germany.
"Low dimensional vertical-cavity surface-emitting lasers"

Thomas Myers, Texas State University, USA.
"New Doping Approaches For CdTe Use in Photovoltaic Devices"

Katsuhiro Tomioka, Hokkaido University, Japan.
"Selective-area growth of III-V nanowires on Si and transistor applications"

Carlos A. Trallero, Kansas State University, USA.
"Strong field processes inside solids at ultrafast time scales"